aptgl700u120d4g aptgl700u120d4g ? rev 1 july, 2010 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 910 i c continuous collector current t c = 80c 700 i cm pulsed collector current t c = 25c 1800 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 3000 w rbsoa reverse bias safe operating area t j = 125c 1200a@1150v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 3 5 2 1 v ces = 1200v i c = 700a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? kelvin emitter for easy drive ? m6 connectors for power ? m4 connectors for signal ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant single switch trench + field stop igbt4 p ower module
aptgl700u120d4g aptgl700u120d4g ? rev 1 july, 2010 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v ; v ce = 1200v 4 ma t j = 25c 1.8 2.2 v ce(sat) collector emitter saturation voltage v ge =15v i c = 600a t j = 150c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 24 ma 5 5.8 6.5 v dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 37.2 c oes output capacitance 2.3 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 2.04 nf q g gate charge v ge = -8v / 15v ; v ce =600v i c =600a 3.4 c t d(on) turn-on delay time 160 t r rise time 30 t d(off) turn-off delay time 340 t f fall time inductive switching (25c) v ge = 15v v ce = 600v i c = 600a r g = 1.8 80 ns t d(on) turn-on delay time 170 t r rise time 40 t d(off) turn-off delay time 450 t f fall time inductive switching (150c) v ge = 15v v ce = 600v i c = 600a r g = 1.8 170 ns e on turn-on switching energy t j = 150c 66 mj e off turn-off switching energy v ge = 15v v ce = 600v i c = 600a r g = 1.8 t j = 150c 66 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 2400 a diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 v t j = 25c 250 i rrm maximum reverse leakage current v r =1200v t j = 150c 2000 a i f dc forward current t c = 80c 600 a t j = 25c 1.7 2.2 v f diode forward voltage i f = 600a v ge = 0v t j = 150c 1.65 v t j = 25c 155 t rr reverse recovery time t j = 150c 300 ns t j = 25c 53 q rr reverse recovery charge t j = 150c 110 c t j = 25c 23.5 e rr reverse recovery energy i f = 600a v r = 600v di/dt = 7000a/s t j = 150c 46 mj
aptgl700u120d4g aptgl700u120d4g ? rev 1 july, 2010 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.05 r thjc junction to case thermal resistance diode 0.1 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 125 c m6 3 5 torque mounting torque m4 1 2 n.m wt package weight 350 g d4 package outline (dimensions in mm)
aptgl700u120d4g aptgl700u120d4g ? rev 1 july, 2010 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 300 600 900 1200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 300 600 900 1200 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 300 600 900 1200 5678910111213 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 30 60 90 120 150 0 300 600 900 1200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 1.8 ? t j = 150c eon eoff er 20 40 60 80 100 120 0 2.5 5 7.5 10 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 600a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 240 480 720 960 1200 1440 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =150c r g =1.8 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
aptgl700u120d4g aptgl700u120d4g ? rev 1 july, 2010 www.microsemi.com 5-5 hard switching zcs zvs 0 30 60 90 120 150 0 150 300 450 600 750 900 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =1.8 ? t j =150c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode forward characteristic of diode t j =25c t j =150c 0 300 600 900 1200 00.40.81.21.622.4 v f (v) i f (a) microsemi reserves the right to change, without notice, the specifications and infor mation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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